Datasheet > SSM6P40TU,LF

SSM6P40TU,LF

更新时间： 2024-02-12 20:15:37

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	201K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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SSM6P40TU,LF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.69	Base Number Matches：	1

SSM6P40TU,LF 数据手册

SSM6P40TU

TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type

SSM6P40TU

○Power Management Switch Applications

Unit: mm

2.1±0.1

○High-Speed Switching Applications

1.7±0.1

•

4.0 V drive

P-ch, 2-in-1

Low ON-resistance:

= 403mΩ (max) (@V

= 226mΩ (max) (@V

= –4 V)

= –10 V)

Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

-30

± 20

DSS

Gate-source voltage

GSS

-1.4

1.Source1

2.Gate1

4.Source2

5.Gate2

Drain current

Pulse

-2.8

3.Drain2

6.Drain1

Drain power dissipation

Channel temperature

(Note 1)

500

°C

150

UF6

Storage temperature range

−55 to150

°C

stg

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

TOSHIBA

2-2T1B

Weight: 7.0 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note1: Mounted on an FR4 board. (Total dissipation)

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

PP2

Start of commercial production

2008-04

2014-03-01

12 3 4 5 6

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