Datasheet > SSM85T08GP

SSM85T08GP

更新时间： 2024-11-13 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	195K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM85T08GP 数据手册

SSM85T08GP

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

BV_DSS

R_DS(ON)

I_D

80V

13mΩ

75A

Simple Drive Requirement

Low On-resistance

Fast Switching Characteristic

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-263(S)

TO-220(P)

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(SSM85T08GP) are available for low-profile applications.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

260

P_D@T_C=25℃

Total Power Dissipation

138

W/℃

Linear Derating Factor

Single Pulse Avalanche Energy³

1.11

E_AS

I_AR

450

Avalanche Current

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

THERMAL DATA

Symbol

Parameter

Value

0.9

Units

℃/W

Rthj-c

Rthj-a

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

08/06/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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