Datasheet > SSM9567GM

SSM9567GM

更新时间： 2024-11-13 06:14:15

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描述
P-channel Enhancement-mode Power MOSFET

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SSM9567GM 数据手册

SSM9567GM

P-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM9567GM acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

converters and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

-40V

50mW

-6A

The SSM9567GM is supplied in an RoHS-compliant

SO-8 package, which is widely used for medium power

commercial and industrial surface mount applications.

Pb-free; RoHS-compliant SO-8

SO-8

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

-40

Units

Drain-source voltage

Gate-source voltage

V_GS

±25

Continuous drain current, T = 25°C

I_D

-6

T = 70°C

-4.8

I_DM

P_D

Pulsed drain current¹

-30

Total power dissipation, T = 25°C

2.5

Linear derating factor

0.02

-55 to 150

W/°C

°C

T_STG

T_J

Storage temperature range

Operating junction temperature range

-55 to 150

°C

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient³

°C/W

ΘJA

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area required for soldering.

9/27/2006 Rev.3.01

www.SiliconStandard.com

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