SSM9926O

更新时间： 2024-09-25 06:14:07

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	279K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM9926O 数据手册

SSM9926O

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

Low on-resistance

Capable of 2.5V gate drive

Low drive current

Surface mount package

DESCRIPTION

BV_DSS

R_DS(ON)

I_D

20V

28mΩ

4.6A

The Advanced Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Pb-free; RoHS-compliant

TSSOP-8

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

4.6

3.7

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.008

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

125

Unit

Rthj-a

Max.

℃/W

03/11/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5 6

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