Datasheet > SSM9971GJ

SSM9971GJ

更新时间： 2024-09-25 06:14:23

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	264K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM9971GJ 数据手册

SSM9971GH,J

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low gate-charge

BV_DSS

R _DS(ON)

I_D

60V

36mW

25A

Simple drive requirement

Fast switching

Description

The SSM9971GH is in a TO-252 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM9971GJ in TO-251, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

TO-252 (H)

TO-251 (J)

Pb-free lead finish (second-level interconnect)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

I_D@ T_A=25°C

I_D@ T_A=100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.31

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

3.2

Unit

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

°C/W

Rthj-a

110

2/16/2005 Rev.2.2

www.SiliconStandard.com

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