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SSM9977GJ PDF预览

SSM9977GJ

更新时间: 2024-11-13 06:14:23
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SSC /
页数 文件大小 规格书
5页 262K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM9977GJ 数据手册

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SSM9977GH,J  
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET  
Low gate-charge  
BVDSS  
R DS(ON)  
ID  
60V  
90mW  
11A  
D
S
Simple drive requirement  
Fast switching  
G
Description  
G
The SSM9977GH is in a TO-252 package, which is widely used for  
commercial and industrial surface mount applications, and is well suited  
for low voltage applications such as DC/DC converters. The through-hole  
version, the SSM9977GJ in TO-251, is available for low-footprint vertical  
mounting. These devices are manufactured with an advanced process,  
providing improved on-resistance and switching performance.  
D
S
TO-252 (H)  
TO-251 (J)  
G
D
S
Pb-free lead finish (second-level interconnect)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±25  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID @ TC=25°C  
ID @ TC=100°C  
IDM  
11  
A
7.1  
A
45  
A
PD @ TC=25°C  
Total Power Dissipation  
21  
W
Linear Derating Factor  
0.17  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
6
Units  
°C/W  
°C/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
2/16/2005 Rev.2.2  
www.SiliconStandard.com  
1 of 5  

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RF SSMA Connector, 1 Contact(s), Female, Board Mount, Solder Terminal, Locking, Jack