Datasheet > SSM9980GJ

SSM9980GJ

更新时间： 2024-09-25 06:14:23

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	721K
描述
N-channel Enhancement-mode Power MOSFET

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SSM9980GJ 数据手册

SSM9980GH,J

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM9980Gx acheives fast switching performance

with low gate charge without a complex drive circuit. It is

suitable for low voltage applications such as DC/DC

converters and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

80V

45mW

21A

The SSM9980GH is in a TO-252 package, which is

widely used for commercial and industrial surface-mount

applications.

Pb-free; RoHS-compliant TO-251 (IPAK)

and TO-252 (DPAK)

The through-hole version, the SSM9980GJ in TO-251,

is available for vertical mounting, where a small footprint

is required on the board, and/or an external heatsink is

to be attached.

These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

TO-251 (suffix J)

TO-252 (suffix H)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Units

Drain-source voltage

Gate-source voltage

V_GS

±25

Continuous drain current, T = 25°C

I_D

T = 100°C

13.4

I_DM

P_D

Pulsed drain current¹

Total power dissipation, T = 25°C

Linear derating factor

0.33

W/°C

T_STG

T_J

Storage temperature range

-55 to 150

°C

Operating junction temperature range

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

°C/W

ΘJC

ΘJA

Maximum thermal resistance, junction-case

Maximum thermal resistance, junction-ambient

3.0

110

Notes:

1.Pulse width must be limited to avoid exceeding the safe operating area.

9/19/2006 Rev.3.1

www.SiliconStandard.com

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