Datasheet > SSM9980GM

SSM9980GM

更新时间： 2024-11-13 06:14:23

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DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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SSM9980GM 数据手册

SSM9980M/GM

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Simple drive requirement

Lower gate charge

BV _DSS

R _DS(ON)

I_D

80V

52mΩ

4.6A

Fast switching characteristics

SO-8

Description

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM9980M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters.

This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

± 20

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=100°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

4.6

2.9

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

12/10/2004 Rev.2.01

www.SiliconStandard.com

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