Datasheet > SSM9973GM

SSM9973GM

更新时间： 2024-11-13 06:14:11

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描述
Dual N-channel Enhancement-mode Power MOSFETs

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SSM9973GM 数据手册

SSM9973GM

Dual N-channel Enhancement-mode Power MOSFETs

Simple drive requirement

Lower gate charge

BV_DSS

R_DS(ON)

II_D

60V

80mΩ

3.9A

Fast switching characteristics

Pb-free; RoHS compliant.

SO-8

DESCRIPTION

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching, ruggedized

device design, low on-resistance and cost-effectiveness.

The SSM9973M is in an SO-8 package, which is widely preferred for

commercial and industrial surface mount applications. This device is

suitable for low voltage applications such as DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

± 20

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

3.9

2.5

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

THERMAL DATA

Symbol

Rthj-a

Parameter

Thermal Resistance Junction-ambient³

Value

62.5

Unit

Max.

°C/W

12/10/2004 Rev.2.03

www.SiliconStandard.com

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