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SSM9973GM PDF预览

SSM9973GM

更新时间: 2024-11-13 06:14:11
品牌 Logo 应用领域
SSC /
页数 文件大小 规格书
5页 260K
描述
Dual N-channel Enhancement-mode Power MOSFETs

SSM9973GM 数据手册

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SSM9973GM  
Dual N-channel Enhancement-mode Power MOSFETs  
Simple drive requirement  
Lower gate charge  
BVDSS  
RDS(ON)  
IID  
60V  
D2  
D2  
D1  
80m  
3.9A  
D1  
Fast switching characteristics  
G2  
S2  
Pb-free; RoHS compliant.  
G1  
SO-8  
S1  
DESCRIPTION  
D2  
D1  
Advanced Power MOSFETs from Silicon Standard provide the  
designer with the best combination of fast switching, ruggedized  
device design, low on-resistance and cost-effectiveness.  
G2  
G1  
The SSM9973M is in an SO-8 package, which is widely preferred for  
commercial and industrial surface mount applications. This device is  
suitable for low voltage applications such as DC/DC converters.  
S1  
S2  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
Units  
V
VDS  
VGS  
60  
± 20  
Gate-Source Voltage  
V
ID @ TA=25°C  
ID @ TA=70°C  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
3.9  
A
2.5  
A
20  
A
PD @ TA=25°C  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.016  
-55 to 150  
-55 to 150  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
THERMAL DATA  
Symbol  
Rthj-a  
Parameter  
Thermal Resistance Junction-ambient3  
Value  
62.5  
Unit  
Max.  
°C/W  
12/10/2004 Rev.2.03  
www.SiliconStandard.com  
1 of 5  

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