Datasheet > SSM9973A

SSM9973A

更新时间： 2024-09-25 11:56:59

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	1070K
描述
5 A, 60V N-Channel Enhancement Mode Power MOSFET

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SSM9973A 数据手册

SSM9973A

5 A, 60V

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

SOT-223

DESCRIPTION

The SSM9973A provide the designer with the best combination of fast switching,

ruggedized design, low on-resistance and cost effectiveness.

Top View

C B

The SOT-223 package is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

ꢀ

Simply drive requirement

ꢀ

Super high density cell design for extremely low R_DS(ON)

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.25

Max.

0.10

0.35

6.20

6.70

3.30

1.42

4.50

0.60

6.70

7.30

3.70

1.90

4.70

0.82

2.30 REF.

2.90

3.10

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Drain – Source Voltage

SYMBOL

V_DS

RATING

UNIT

Gate – Source Voltage

V_GS

±20

T_A= 25°C

T_A= 70°C

5.0

Continuous Drain Current³, V_GS@10V

I_D

4.0

Pulsed Drain Current^1,2

I_DM

P _D

2.7

Total Power Dissipation, T_A= 25°C

Maximum Junction – Ambient³

Linear Derating Factor

R_θJA

°C/W

W/°C

°C

0.02

Operating Junction & Storage Temperature Range

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

Drain-Source Breakdown Voltage

Gate Threshold Voltage

SYMBOL

BV_DSS

V_GS(TH)

g_FS

MIN

TYP

MAX

UNIT

TEST CONDITION

V_GS=0V, I_D=250µA

0.5

1.5

V_DS= V_GS,I_D=250µA

V_DS=15V, I_D=4A

V_GS=±20V

Forward Transconductance

Gate-Source Leakage Current

I_GSS

±100

T = 25°C

V _DS=60V, V_GS=0V

V_DS=60V, V_GS=0V

V_GS=10V, I_D=5A

Drain-Source Leakage

Current

I_DSS

µA

T_A= 70°C

115

Drain-Source On Resistance

R_DS(ON)

mΩ

125

V_GS=4.5V, I_D=4.5A

Total Gate Charge²

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time²

Rise Time

Q_g

Q_gs

4.0

1.2

1.0

V _GS=4.5V

V_DS=30V

I _D=4A

Q_gd

T_d(ON)

T_r

V_DD=30V

V _GS=10V

320

I _D=2.5A

Turn-off Delay Time

Fall Time

T_d(OFF)

T_f

R_G=6Ω, R_L=12Ω

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C_ISS

C_OSS

C_RSS

V_DS=30V

V_GS=0V

f=1MHz

SOURCE-DRAIN DIODE CHARACTERISTICS

V_SD1.2

Forward On Voltage²

V_GS=0V, I _S=2.5A

Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width≦300µS, Duty cycle≦2%

3. Surface mounted on 1 in²copper pad of FR4 board; 120°C/W when mounted on m in, copper pad.

29-Jan-2010 Rev. A

Page 1 of 3

12 3

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与SSM9973A相关器件

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SSM9973GH	SSC	获取价格	N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
SSM9973GJ	SSC	获取价格	N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
SSM9973GM	SSC	获取价格	Dual N-channel Enhancement-mode Power MOSFETs
SSM9974GP	SSC	获取价格	N-channel Enhancement-mode Power MOSFET
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SSM9975M	SSC	获取价格	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
SSM9977GH	SSC	获取价格	N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
SSM9977GJ	SSC	获取价格	N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
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