Datasheet > SSM9934GM

SSM9934GM

更新时间： 2024-09-25 06:14:11

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SSC		/
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描述
2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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SSM9934GM 数据手册

SSM9934GM

2N AND 2P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

PRODUCT SUMMARY

P2G

N-CH BV_DSS

35V

48mΩ

4.3A

N2D/P2D

P1S/P2S

P1G

Simple Drive Requirement

Low On-resistance

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

N2G

Full Bridge Application on

LCD Monitor Inverter

N1S/N2S

-35V

N1D/P1D

N1G

SO-8

72mΩ

-3.6A

I_D

DESCRIPTION

P1S

P2S

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance and

cost-effectiveness.

P1G

P2G

P2N2D

P1N1D

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

N2G

N1G

N2S

N1S

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Rating

Units

N-channel

P-channel

-35

V_DS

V_GS

Drain-Source Voltage

± 20

4.3

3.4

Gate-Source Voltage

± 20

-3.6

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-2.8

-20

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

1.38

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

Unit

Rthj-a

Max.

℃/W

09/13/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5 6 7 8

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