Datasheet > SSM9960J

SSM9960J

更新时间： 2024-11-13 06:14:11

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	264K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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数据手册

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SSM9960J 数据手册

SSM9960(G)H,J

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low gate-charge

BV_DSS

R _DS(ON)

I_D

40V

16mW

42A

Simple drive requirement

Fast switching

Description

The SSM9960H is in a TO-252 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM9960J in TO-251, is available for low-footprint vertical

TO-252 (H)

TO-251 (J)

This device is available with Pb-free lead finish

(second-level interconnect) as SSM9960GH or SSM9960GJ.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

± 20

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V

I_D@ T_A=25°C

I_D@ T_A=100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

195

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.36

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

2.8

°C/W

Rthj-a

110

11/16/2004 Rev.2.1

www.SiliconStandard.com

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