SSM9926TGO

更新时间： 2024-11-13 06:14:07

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	257K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM9926TGO 数据手册

SSM9926TGO

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

Low on-resistance

Capable of 2.5V gate drive

Surface mount package

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

BV_DSS

R_DS(ON)

I_D

20V

32mΩ

4.7A

Pb-free; RoHS-compliant

TSSOP-8

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

±12

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

4.7

3.8

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.008

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

125

Unit

Rthj-a

Max.

℃/W

03/11/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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