Datasheet > SSM9922EO

SSM9922EO

更新时间： 2024-11-13 06:14:11

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SSC		/
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描述
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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SSM9922EO 数据手册

SSM9922(G)EO

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Low on-resistance

BV_DSS

R_DS(ON)

I_D

20V

15mW

6.8A

Capable of 2.5V gate drive

Ideal for DC/DC battery applications

TSSOP-8

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Drain Current³, V_{G S}@ 4.5V

Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

±12

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

6.8

5.4

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.008

-55 to 150

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

125

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

Rev.2.01 12/06/2004

www.SiliconStandard.com

1 of 5

12 3 4 5

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