SSM9926GEO

更新时间： 2024-09-25 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	144K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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SSM9926GEO 数据手册

SSM9926GEO

N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Low on-resistance

BV_DSS

R_DS(ON)

I_D

20V

28mΩ

4.6A

Capable of 2.5V gate drive

Low drive current

TSSOP-8

Surface-mount package

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

RoHS compliant.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

4.6

3.7

P_D@ T_A=25°C

0.008

-55 to 150

W/°C

°C

T_STG

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

125

Unit

Rthj-amb

Thermal Resistance Junction-ambient

Max.

°C/W

Rev.2.10 1/29/2005

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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