Datasheet > SSM9926M

SSM9926M

更新时间： 2024-11-12 21:56:07

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其他 - ETC		/
页数	文件大小	规格书
6页	105K
描述
DUAL N CHANNEL ENHANCEMENT MODE POWER MOSFETS

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SSM9926M 数据手册

SSM9926M

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Low on-resistance

BV_DSS

R_DS(ON)

I_D

20V

30mW

Capable of 2.5V gate drive

Low drive current

Surface-mount package

SO-8

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current^1,4

Rating

Units

V_DS

V_GS

± 8

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

4.8

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

°C

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient

Max.

°C/W

Rev.2.01 6/26/2003

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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