Datasheet > SSM9575GM

SSM9575GM

更新时间： 2024-11-13 06:14:07

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SSC		/
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描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM9575GM 数据手册

SSM9575M/GM

P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Low on-resistance

BV _DSS

R _DS(ON)

I_D

-60V

90mΩ

-4A

Fast switching characteristics

SO-8

Description

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM9575M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters.

This device is available with Pb-free lead finish (second-level interconnect) as SSM9575GM.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-60

Units

V_DS

V_GS

Drain-Source Voltage

± 25

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=100°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4

-3.2

-20

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

12/02/2004 Rev.2.01

www.SiliconStandard.com

1 of 5

12 3 4 5

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