Datasheet > SSM9915J

SSM9915J

更新时间： 2024-11-13 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	423K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM9915J 数据手册

SSM9915H,J

N-CHANNEL ENHANCEMENT-MODE

POWER MOSFET

Low on-resistance

BV_DSS

R_DS(ON)

I_D

20V

50mΩ

20A

Capable of 2.5V gate drive

Low drive current

Simple drive requirement

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 10

Continuous Drain Current, V_GS@ 4.5V

I_D@T_C=25℃

I_D@T_C=125℃

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current¹

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.2

W/℃

℃

T_STG

T_J

Storage Temperature Range

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

4.8

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

Rev.2.01 6/26/2003

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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