Datasheet > SSM9585GM

SSM9585GM

更新时间： 2024-09-25 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	285K
描述
P-channel Enhancement-mode Power MOSFET

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SSM9585GM 数据手册

SSM9585GM

P-channel Enhancement-mode Power MOSFET

Simple drive requirement

Lower gate charge

BV_DSS

R_DS(ON)

I _D

-80V

180mΩ

-2.7A

Fast switching characteristics

Pb-free; RoHS compliant.

DESCRIPTION

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

SO-8

The SSM9585GM is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications. This device is suitable

for low voltage applications such as DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

-80

Units

V_DS

V_GS

Gate-Source Voltage

±25

-2.7

-2.1

-20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Value

Unit

Θj-a

Maximum Thermal Resistance Junction-ambient³

°C/W

3/21/2005 Rev.2.01

www.SiliconStandard.com

1 of 5

12 3 4 5

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