Datasheet > SSM9435GJ

SSM9435GJ

更新时间： 2024-09-25 06:14:07

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	276K
描述
P-channel Enhancement-mode Power MOSFET

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SSM9435GJ 数据手册

SSM9435GH,J

P-channel Enhancement-mode Power MOSFET

Low gate-charge

BV_DSS

R _DS(ON)

I_D

-30V

50mW

-20A

Simple drive requirement

Fast switching

Pb-free; RoHS compliant.

DESCRIPTION

The SSM9435H is in a TO-252 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM9435J in TO-251, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

TO-252 (H)

TO-251 (J)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

-30

Units

V_DS

V_GS

Gate-Source Voltage

± 20

-20

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current

Pulsed Drain Current¹

-13

-72

P_D@ T_C=25°C

Total Power Dissipation

Linear Derating Factor

0.25

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Value

Unit

°C/W

Rthj-c

Rthj-a

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

2/16/2005 Rev.2.1

www.SiliconStandard.com

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