Datasheet > SSM9435GM

SSM9435GM

更新时间： 2024-09-25 09:04:47

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	491K
描述
P-channel Enhancement-mode Power MOSFET

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SSM9435GM 数据手册

SSM9435GM

P-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM9435GM acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as battery

management and general high-side switch circuits.

BV_DSS

R_DS(ON)

I_D

-30V

50mW

-5.3A

The SSM9435GM is supplied in an RoHS-compliant

SO-8 package, which is widely used for medium power

commercial and industrial surface mount applications.

Pb-free; RoHS-compliant SO-8

SO-8

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

-30

Units

Drain-source voltage

Gate-source voltage

V_GS

±20

-5.3

-4.7

-20

Continuous drain current, T = 25°C

I_D

T = 70°C

I_DM

P_D

Pulsed drain current¹

Total power dissipation, T = 25°C

2.5

W/°C

Linear derating factor

0.02

-55 to 150

°C

T_STG

T_J

Storage temperature range

Operating junction temperature range

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient³

°C/W

ΘJA

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.

2/12/2006 Rev.3.01

www.SiliconStandard.com

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