Datasheet > SSM9475M

SSM9475M

更新时间： 2024-09-25 06:14:15

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	308K
描述
N-channel Enhancement-mode Power MOSFET

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SSM9475M 数据手册

SSM9475M

N-channel Enhancement-mode Power MOSFET

Simple drive requirement

Lower gate charge

BV_DSS

R_DS(ON)

I _D

60V

40mΩ

6.9A

Fast switching characteristics

DESCRIPTION

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

SO-8

The SSM9475M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

± 25

6.9

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=100°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

5.5

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Rthj-a

Parameter

Thermal Resistance Junction-ambient³

Value

Unit

Max.

°C/W

3/21/2005 Rev.2.01

www.SiliconStandard.com

1 of 5

12 3 4 5

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