Datasheet > SSM90T03GS

SSM90T03GS

更新时间： 2024-11-24 06:14:23

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SSC		/
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描述
N-channel Enhancement-mode Power MOSFET

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数据手册

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SSM90T03GS 数据手册

SSM90T03GP,S

N-channel Enhancement-mode Power MOSFET

Low gate-charge

BV_DSS

R_DS(ON)

I_D

30V

4mΩ

75A

Simple drive requirement

Fast switching

Pb-free, RoHS compliant.

DESCRIPTION

The SSM90T03GS is in a TO-263 package, which is widely used for

commercial and industrial surface mount applications. This device is

suitable for low voltage applications such as DC/DC converters.

The through-hole version, the SSM90T03GP in TO-220, is available for

vertical-mounting, where a small footprint is required on the board, and/or

an external heatsink is to be attached.

TO-263 (S)

TO-220 (P)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

±20

Continuous Drain Current, V_GS= 4.5V

I_D@ Tc=25°C

I_D@ Tc=100°C

I_DM

Continuous Drain Current, V_GS= 4.5V

Pulsed Drain Current¹

350

P_D@ Tc=25°C

Total Power Dissipation

Linear Derating Factor

0.7

W/°C

°C

E_AS

T_STG

T_J

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Value

Units

°C/W

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

1.3

ΘJC

ΘJA

2/17/2005 Rev.2.3

www.SiliconStandard.com

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