Datasheet > SSM9410M

SSM9410M

更新时间： 2024-11-20 06:14:15

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描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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数据手册

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SSM9410M 数据手册

SSM9410M

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Low on-resistance

Fast switching

BV_DSS

R_DS(ON)

I_D

30V

6mW

18A

SO-8

Description

Advanced power MOSFETs from Silicon Standard provide

the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial and industrial

surface-mount applications and is well suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

± 12

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

2.5

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

°C

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

Rev.2.02 4/06/2004

www.SiliconStandard.com

1 of 4

12 3 4

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