Datasheet > SSM9435

SSM9435

更新时间： 2024-11-24 06:14:15

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SECOS		/
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4页	696K
描述
P-Channel Enhancement Mode Power Mos.FET

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SSM9435 数据手册

SSM9435

-6A, -30V,RDS(ON) 50m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

SOT-223

The SSM9435 provide the designer with best

combination of fast switching, low on-resistance

and cost-effectiveness.

Features

* Simple Drive Requirement

* Fast Switching Characteristic

* Lower On-Resistance

Millimeter

Min. Max.

Millimeter

Min. Max.

REF.

6.70

2.90

0.02

0°

0.60

0.25

7.30

3.10

0.10

10°

0.80

0.35

13°TYP.

2.30 REF.

9 4 3 5

6.30

6.70

3.70

1.80

Date Code

6.30

3.30

1.40

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-30

±25

-6.0

-4..8

-20

Gate-Source Voltage

VGS

Continuous Drain Current³

Pulsed Drain Current^1,2

ID@TA=25^oC

^oC

ID@TA=70

IDM

^oC

Total Power Dissipation

PD@TA=25

2.7

0.02

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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