Datasheet > SSM9408GH

SSM9408GH

更新时间： 2024-11-20 06:14:07

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SSC		/
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描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM9408GH 数据手册

SSM9408GH

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

BV_DSS

R_DS(ON)

I_D

30V

10mΩ

57A

Lower Gate Charge

Simple Drive Requirement

Fast Switching Characteristic

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-252(H)

TO-251(J)

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

The through-hole version

applications such as DC/DC converters.

(SSM9408GH) are available for low-profile applications.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

±20

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current

Pulsed Drain Current¹

228

P_D@T_C=25℃

Total Power Dissipation

53.6

W/℃

℃

Linear Derating Factor

0.36

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

THERMAL DATA

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Rthj-a

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

2.8

110

02/21/2008 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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