Datasheet > SSM85T03GJ

SSM85T03GJ

更新时间： 2024-11-24 06:14:23

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	271K
描述
N-channel Enhancement-mode Power MOSFET

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SSM85T03GJ 数据手册

SSM85T03GH,J

N-channel Enhancement-mode Power MOSFET

Low gate-charge

BV_DSS

R _DS(ON)

I_D

30V

6mW

75A

Simple drive requirement

Fast switching

Pb-free; RoHS compliant.

DESCRIPTION

The SSM85T03GH is in a TO-252 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM85T03J in TO-251, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance. The devices

have a maximum junction temperature rating of 175°C for improved thermal

margin and reliability.

TO-252 (H)

TO-251 (J)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

± 20

Gate-Source Voltage

Continuous Drain Current, V_GS@ 4.5V

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current¹

350

P_D@ T_C=25°C

Total Power Dissipation

107

Linear Derating Factor

0.7

W/°C

°C

E_AS

T_STG

T_J

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

THERMAL DATA

Symbol

Parameter

Value

Unit

Rthj-c

Rthj-a

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

1.4

°C/W

110

5/17/2005 Rev.2.3

www.SiliconStandard.com

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