Datasheet > SSM7002EGU

SSM7002EGU

更新时间： 2024-09-25 06:14:15

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SSC		/
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描述
N-channel Enhancement-mode Power MOSFET

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SSM7002EGU 数据手册

SSM7002EGU

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM7002EGU acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as small

converters and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

50V

250mA

The SSM7002EGU is supplied in a RoHS-compliant

SOT-323 package, which is widely used for low-power

commercial and industrial surface mount applications

where a small footprint is required.

Pb-free; RoHS-compliant SOT-323

SOT-323

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_GS

I_D

Parameter

Value

Units

Drain-source voltage

Gate-source voltage

Continuous drain current ³, T = 25°C

± 20

250

ISD

Source-drain diode current

Pulsed drain current ^1,2

115

I_DM

1.0

P_D

Total power dissipation ³, T = 25°C

200

°C

T = 75°C

120

T_STG

T_J

Storage temperature range

Operating junction temperature range

-55 to 150

°C

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

ΘJA

Maximum thermal resistance, junction-ambient³

625

°C/W

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on FR4 board

6/26/2006 Rev.3.02

www.SiliconStandard.com

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