Datasheet > SSM75T10GP

SSM75T10GP

更新时间： 2024-11-13 09:04:47

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	275K
描述
N-channel Enhancement-mode Power MOSFET

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数据手册

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SSM75T10GP 数据手册

SSM75T10GP,S

N-channel Enhancement-mode Power MOSFET

Low gate-charge

BV _DSS

R _DS(ON)

I _D

100V

15mΩ

72A

Simple drive requirement

Fast switching

Pb-free, RoHS compliant.

DESCRIPTION

The SSM75T10GS is in a TO-263 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM75T10GP in TO-220, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

TO-263 (S)

TO-220 (P)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Rating

100

±20

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V³

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

Total Power Dissipation

Linear Derating Factor

260

138

1.11

P_D@ T_C=25°C

W/°C

T_STG

T_J

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

THERMAL DATA

Symbol

Rthj-c

Parameter

Value

Units

°C/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

0.9

Rthj-a

2/16/2005 Rev.1.1

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