Datasheet > SSM7811GM

SSM7811GM

更新时间： 2024-11-13 06:14:23

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描述
N-channel Enhancement-mode Power MOSFET

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SSM7811GM 数据手册

SSM7811GM

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM7811GM acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

converters and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

25V

12mW

11.8A

The SSM7811GM is supplied in an RoHS-compliant

SO-8 package, which is widely used for medium power

commercial and industrial surface mount applications.

Pb-free; RoHS-compliant SO-8

SO-8

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Units

Drain-source voltage

Gate-source voltage

V_GS

±12

Continuous drain current, T = 25°C

I_D

11.8

T = 70°C

9.4

I_DM

P_D

Pulsed drain current¹

Total power dissipation, T = 25°C

2.5

Linear derating factor

0.02

W/°C

°C

-55 to 150

T_STG

T_J

Storage temperature range

Operating junction temperature range

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient³

°C/W

ΘJA

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.

9/16/2006 Rev.3.01

www.SiliconStandard.com

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