Datasheet > SSM6P816R

SSM6P816R

更新时间： 2024-09-26 14:57:55

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SSM6P816R 数据手册

SSM6P816R

MOSFETs Silicon P-Channel MOS

SSM6P816R

1. Applications

•

Power Management Switches

2. Features

(1) 1.8 V drive

(2) Low drain-source on-resistance

: RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V)

RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V)

RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V)

3. Packaging and Internal Circuit

1: Source 1

2: Gate 1

3: Drain 2

4: Source 2

5: Gate 2

6: Drain 1

TSOP6F

Start of commercial production

2019-07

2020-07-27

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7 8

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