Datasheet > SSM6P69NU

SSM6P69NU

更新时间： 2024-11-21 14:56:19

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SSM6P69NU 数据手册

SSM6P69NU

MOSFETs Silicon P-Channel MOS

SSM6P69NU

1. Applications

•

Power Management Switches

2. Features

(1) AEC-Q101 qualified (Note 1)

(2) 1.8 V drive

(3) Low drain-source on-resistance

: RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V)

RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V)

RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V)

RDS(ON) = 45 mΩ (max) (@VGS = -10 V)

Note 1: For detail information, please contact to our sales.

3. Packaging and Pin Assignment

1: Source 1

2: Gate 1

3: Drain 2

4: Source 2

5: Gate 2

6: Drain 1

UDFN6

Start of commercial production

2018-02

2018-03-27

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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