SSM6P36FE

更新时间： 2024-02-08 14:04:31

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
5页	190K
描述
Power Management Switches

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中文翻译

获取价格

技术参数
数据手册

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SSM6P36FE 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

SSM6P36FE 数据手册

SSM6P36FE

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM6P36FE

○Power Management Switches

•

1.5-V drive

Low ON-resistance:

= 3.60 Ω (max) (@V

= 2.70 Ω (max) (@V

= 1.60 Ω (max) (@V

= 1.31 Ω (max) (@V

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

Unit: mm

1.6±0.05

1.2±0.05

Absolute Maximum Ratings (Ta = 25 °C)

(Common to the Q1, Q2)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

-20

±8

DSS

Gate-source voltage

GSS

-330

Drain current

Pulse

-660

Drain power dissipation

Channel temperature

(Note1)

150

°C

1.Source1

2.Gate1

3.Drain2

4.Source2

5.Gate2

150

stg

−55 to 150

°C

Storage temperature range

6.Drain1

ES6

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2N1D

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

Weight: 3.0 mg (typ.)

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Total rating

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm²× 6)

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

Let V be the voltage applied between gate and source that causes the drain current (I ) to below (−1 mA for the

SSM6P36FE). Then, for normal switching operation, V

must be higher than V and V

must be lower than

GS(off)

GS(on)

th,

th.

This relationship can be expressed as: V < V < V

GS(off) th GS(on).

Take this into consideration when using the device.

2008-06-05

12 3 4 5

中文翻译

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与SSM6P36FE相关器件

型号	品牌	获取价格	描述	数据表
SSM6P36FE(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
SSM6P36FE(TE85L,F)	TOSHIBA	获取价格	MOSFET DUAL P-CH 20V .33A ES6
SSM6P36FE(TPL3)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
SSM6P36TU	TOSHIBA	获取价格	TRANSISTOR 330 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 PI
SSM6P36TU(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
SSM6P36TU,LF	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
SSM6P36TU,LF(T	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
SSM6P39TU	TOSHIBA	获取价格	TRANSISTOR 1500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 P
SSM6P39TU,LF	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
SSM6P40TU	TOSHIBA	获取价格	TRANSISTOR 1400 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 P

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