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SSM6P36TU PDF预览

SSM6P36TU

更新时间： 2024-11-09 20:04:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 149K
描述
TRANSISTOR 330 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 PIN, FET General Purpose Small Signal

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SSM6P36TU 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.28配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：20 V最大漏极电流 (ID)：0.33 A
最大漏源导通电阻：1.31 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SSM6P36TU 数据手册

 浏览型号SSM6P36TU的Datasheet PDF文件第2页浏览型号SSM6P36TU的Datasheet PDF文件第3页浏览型号SSM6P36TU的Datasheet PDF文件第4页浏览型号SSM6P36TU的Datasheet PDF文件第5页 
SSM6P36TU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM6P36TU  
○Power Management Switches  
•
•
1.5-V drive  
Unit: mm  
2.1±0.1  
Low ON-resistance: R = 3.60 Ω (max) (@V  
= -1.5 V)  
= -1.8 V)  
= -2.8 V)  
= -4.5 V)  
on  
GS  
: R = 2.70 Ω (max) (@V  
on  
GS  
GS  
GS  
1.7±0.1  
: R = 1.60 Ω (max) (@V  
on  
: R = 1.31 Ω (max) (@V  
on  
1
2
3
6
5
4
Absolute Maximum Ratings (Ta = 25 °C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
-20  
±8  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
I
-330  
D
Drain current  
mA  
Pulse  
I
-660  
DP  
Drain power dissipation  
Channel temperature  
P
(Note1)  
500  
mW  
°C  
D
T
ch  
150  
1.Source1  
2.Gate1  
3.Drain2  
4.Source2  
5.Gate2  
T
stg  
−55 to 150  
°C  
Storage temperature range  
6.Drain1  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
UF6  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2T1B  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
Weight: 7.0 mg (typ.)  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note1: Total rating  
Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
PX  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is  
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come  
into direct contact with devices should be made of anti-static materials.  
Usage Considerations  
Let V be the voltage applied between gate and source that causes the drain current (I ) to below −1 mA for the  
th  
D
SSM6P36TU). Then, for normal switching operation, V  
must be higher than V and V  
must be lower than  
GS(off)  
GS(on)  
th,  
V
This relationship can be expressed as: V < V < V  
GS(off) th GS(on).  
th.  
Take this into consideration when using the device.  
1
2008-06-11  
12345

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