5秒后页面跳转
捷配首页

Datasheet > SSM6P36TU
SSM6P36TU PDF预览

SSM6P36TU

更新时间： 2024-01-12 03:05:13
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 149K
描述
TRANSISTOR 330 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 PIN, FET General Purpose Small Signal

阅读下载

中文翻译

获取价格

SSM6P36TU 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.28配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：20 V最大漏极电流 (ID)：0.33 A
最大漏源导通电阻：1.31 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SSM6P36TU 数据手册

 浏览型号SSM6P36TU的Datasheet PDF文件第2页浏览型号SSM6P36TU的Datasheet PDF文件第3页浏览型号SSM6P36TU的Datasheet PDF文件第4页浏览型号SSM6P36TU的Datasheet PDF文件第5页 
SSM6P36TU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM6P36TU  
○Power Management Switches  
•
•
1.5-V drive  
Unit: mm  
2.1±0.1  
Low ON-resistance: R = 3.60 Ω (max) (@V  
= -1.5 V)  
= -1.8 V)  
= -2.8 V)  
= -4.5 V)  
on  
GS  
: R = 2.70 Ω (max) (@V  
on  
GS  
GS  
GS  
1.7±0.1  
: R = 1.60 Ω (max) (@V  
on  
: R = 1.31 Ω (max) (@V  
on  
1
2
3
6
5
4
Absolute Maximum Ratings (Ta = 25 °C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
-20  
±8  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
I
-330  
D
Drain current  
mA  
Pulse  
I
-660  
DP  
Drain power dissipation  
Channel temperature  
P
(Note1)  
500  
mW  
°C  
D
T
ch  
150  
1.Source1  
2.Gate1  
3.Drain2  
4.Source2  
5.Gate2  
T
stg  
−55 to 150  
°C  
Storage temperature range  
6.Drain1  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
UF6  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2T1B  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
Weight: 7.0 mg (typ.)  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note1: Total rating  
Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
PX  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is  
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come  
into direct contact with devices should be made of anti-static materials.  
Usage Considerations  
Let V be the voltage applied between gate and source that causes the drain current (I ) to below −1 mA for the  
th  
D
SSM6P36TU). Then, for normal switching operation, V  
must be higher than V and V  
must be lower than  
GS(off)  
GS(on)  
th,  
V
This relationship can be expressed as: V < V < V  
GS(off) th GS(on).  
th.  
Take this into consideration when using the device.  
1
2008-06-11  
12345

中文翻译

下载PDF

与SSM6P36TU相关器件

型号 品牌 获取价格 描述 数据表
SSM6P36TU(TE85L,F) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
SSM6P36TU,LF TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor
SSM6P36TU,LF(T TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor
SSM6P39TU TOSHIBA

获取价格

 		TRANSISTOR 1500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 P
SSM6P39TU,LF TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor
SSM6P40TU TOSHIBA

获取价格

 		TRANSISTOR 1400 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 P
SSM6P40TU(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,1.4A I(D),SOT-363VAR
SSM6P40TU,LF TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor
SSM6P41FE TOSHIBA

获取价格

 		Power Management Switches
SSM6P41FE(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,720MA I(D),TSOP

与SSM6P36TU相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证