Datasheet > SSM6P39TU,LF

SSM6P39TU,LF

更新时间： 2024-02-24 03:47:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	203K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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SSM6P39TU,LF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.67	Base Number Matches：	1

SSM6P39TU,LF 数据手册

SSM6P39TU

TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type

SSM6P39TU

○Power Management Switch Applications

Unit: mm

2.1±0.1

○High-Speed Switching Applications

1.7±0.1

•

1.8 V drive

P-ch 2-in-1

Low ON-resistance:

= 430mΩ (max) (@V

= 294mΩ (max) (@V

= 213mΩ (max) (@V

= –1.8 V)

= –2.5 V)

= –4.0 V)

Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)

(Note)

1.Source1

2.Gate1

4.Source2

5.Gate2

Characteristic

Drain-source voltage

Symbol

Rating

Unit

3.Drain2

6.Drain1

-20

± 8

DSS

UF6

Gate-source voltage

GSS

-1.5

JEDEC

JEITA

―

Drain current

Pulse

-3

Drain power dissipation

Channel temperature

(Note 1)

500

°C

TOSHIBA

2-2T1B

150

Weight: 7.0mg (typ.)

Storage temperature range

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Mounted on an FR4 board. (total dissipation)

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm²)

Start of commercial production

2008-01

2014-03-01

12 3 4 5 6 7

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