5秒后页面跳转
SSM6P35FE(TPL3,F) PDF预览

SSM6P35FE(TPL3,F)

更新时间: 2024-02-25 19:51:44
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 189K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-363VAR

SSM6P35FE(TPL3,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大漏极电流 (Abs) (ID):0.1 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.15 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SSM6P35FE(TPL3,F) 数据手册

 浏览型号SSM6P35FE(TPL3,F)的Datasheet PDF文件第2页浏览型号SSM6P35FE(TPL3,F)的Datasheet PDF文件第3页浏览型号SSM6P35FE(TPL3,F)的Datasheet PDF文件第4页浏览型号SSM6P35FE(TPL3,F)的Datasheet PDF文件第5页 
SSM6P35FE  
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type  
SSM6P35FE  
High-Speed Switching Applications  
Unit: mm  
1.6±0.05  
Analog Switch Applications  
1.2±0.05  
1.2-V drive  
Low ON-resistance : R = 44 (max) (@V  
= -1.2 V)  
= -1.5 V)  
= -2.5 V)  
= -4.0 V)  
on  
GS  
1
2
3
6
: R = 22 (max) (@V  
on  
GS  
GS  
: R = 11 (max) (@V  
on  
5
4
: R  
=
8 (max) (@V  
GS  
on  
Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2)  
Characteristics  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
V
-20  
±10  
V
V
DSS  
1.Source1 4.Source2  
Gate–source voltage  
GSS  
2.Gate1  
3.Drain2  
5.Gate2  
6.Drain1  
ES6  
DC  
I
-100  
D
Drain current  
mA  
Pulse  
I
-200  
DP  
JEDEC  
JEITA  
-
-
Drain power dissipation  
Channel temperature  
Storage temperature  
P (Note 1)  
150  
mW  
°C  
D
T
ch  
150  
T
stg  
55 to 150  
°C  
TOSHIBA  
2-2N1D  
Weight: 3.0 mg (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Total rating  
Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
PZ  
Q2  
1
2
3
1
2
3
1
2008-03-14  

与SSM6P35FE(TPL3,F)相关器件

型号 品牌 获取价格 描述 数据表
SSM6P35FU TOSHIBA

获取价格

TRANSISTOR 100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, US6, 2-2J1C, 6 PI
SSM6P35FU(TE85L) TOSHIBA

获取价格

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-363
SSM6P35FU(TE85L,F) TOSHIBA

获取价格

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-363
SSM6P36FE TOSHIBA

获取价格

Power Management Switches
SSM6P36FE(TE85L) TOSHIBA

获取价格

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
SSM6P36FE(TE85L,F) TOSHIBA

获取价格

MOSFET DUAL P-CH 20V .33A ES6
SSM6P36FE(TPL3) TOSHIBA

获取价格

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
SSM6P36TU TOSHIBA

获取价格

TRANSISTOR 330 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 PI
SSM6P36TU(TE85L,F) TOSHIBA

获取价格

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,330MA I(D),SOT-363VAR
SSM6P36TU,LF TOSHIBA

获取价格

Small Signal Field-Effect Transistor