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SSM6P35AFE

更新时间: 2024-11-06 14:58:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 212K
描述
P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-563(ES6)

SSM6P35AFE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.66峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SSM6P35AFE 数据手册

 浏览型号SSM6P35AFE的Datasheet PDF文件第2页浏览型号SSM6P35AFE的Datasheet PDF文件第3页浏览型号SSM6P35AFE的Datasheet PDF文件第4页浏览型号SSM6P35AFE的Datasheet PDF文件第5页浏览型号SSM6P35AFE的Datasheet PDF文件第6页浏览型号SSM6P35AFE的Datasheet PDF文件第7页 
SSM6P35AFE  
MOSFETs Silicon P-Channel MOS  
SSM6P35AFE  
1. Applications  
Analog Switches  
2. Features  
(1) 1.2 V drive  
(2) Low drain-source on-resistance  
: RDS(ON) = 3.2 (typ.) (@VGS = -1.2 V)  
RDS(ON) = 2.3 (typ.) (@VGS = -1.5 V)  
RDS(ON) = 2.0 (typ.) (@VGS = -1.8 V)  
RDS(ON) = 1.5 (typ.) (@VGS = -2.5 V)  
RDS(ON) = 1.1 (typ.) (@VGS = -4.5 V)  
3. Packaging and Internal Circuit  
1: Source 1  
2: Gate 1  
3: Drain 2  
4: Source 2  
5: Gate 2  
6: Drain 1  
ES6  
Start of commercial production  
2017-03  
©2017-2021  
2021-02-01  
Rev.3.0  
1
Toshiba Electronic Devices & Storage Corporation  

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