生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 0.5 A |
最大漏极电流 (ID): | 0.5 A | 最大漏源导通电阻: | 0.98 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SSM6P26TU(TE85L) | TOSHIBA | SSM6P26TU(TE85L) |
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SSM6P26TU(TE85L,F) | TOSHIBA | SSM6P26TU(TE85L,F) |
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SSM6P28TU | TOSHIBA | High-Speed Switching Applications |
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SSM6P28TU(TE85L) | TOSHIBA | TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,800MA I(D),SOT-363VAR |
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SSM6P35AFE | TOSHIBA | P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, |
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SSM6P35AFU | TOSHIBA | P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, |
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