Datasheet > SSM6P25TU,LF(T

SSM6P25TU,LF(T

更新时间： 2024-11-06 10:14:27

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	186K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET

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技术参数
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SSM6P25TU,LF(T 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code：	unknown	风险等级：	5.76
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	0.5 A	最大漏源导通电阻：	0.43 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F6
元件数量：	2	端子数量：	6
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SSM6P25TU,LF(T 数据手册

SSM6P25TU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

SSM6P25TU

High Speed Switching Applications

Unit: mm

•

Optimum for high-density mounting in small packages

•

Low on-resistance:

= 260mΩ (max) (@V

= 430mΩ (max) (@V

= -4 V)

2.1±0.1

1.7±0.1

= -2.5 V)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

-20

± 12

-0.5

-1.5

Gate-Source voltage

GSS

Drain current

Pulse

Drain power dissipation

Channel temperature

500

1.Source1 4.Source2

(Note 1)

2.Gate1

3.Drain2

5.Gate2

6.Drain1

150

°C

Storage temperature range

stg

−55 to 150

UF6

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2T1B

Weight: 7.0 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Note 1: Mounted on FR4 board. (total dissipation)

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

Start of commercial production

2004-03

2014-03-01

12 3 4 5 6

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与SSM6P25TU,LF(T相关器件

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SSM6P35FE(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-363VAR
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