SSM6P15FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P15FE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
•
•
Small package
Low ON resistance : R = 12 Ω (max) (@V
= −4 V)
= −2.5 V)
on
GS
GS
: R = 32 Ω (max) (@V
on
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
−30
±20
V
V
DS
Gate-Source voltage
V
D
GSS
DC
I
−100
−200
150
D
Drain current
mA
Pulse
I
DP
Drain power dissipation (Ta = 25°C)
Channel temperature
P
(Note 1)
mW
°C
T
ch
150
1: Source1
Storage temperature range
T
−55~150
°C
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
stg
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
TOSHIBA
2-2N1D
Weight: 0.003g(typ.)
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)
0.3 mm
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
D Q
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01