SSM3J36FS

更新时间： 2024-11-30 09:04:55

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
5页	185K
描述
Power Management Switches

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中文翻译

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技术参数
数据手册

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SSM3J36FS 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.25	Is Samacsys：	N
配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	0.33 A	最大漏源导通电阻：	1.31 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

SSM3J36FS 数据手册

SSM3J36FS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J36FS

○Power Management Switches

•

1.5-V drive

Unit: mm

Low ON-resistance: R = 3.60 Ω (max) (@V

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

: R = 2.70 Ω (max) (@V

: R = 1.60 Ω (max) (@V

: R = 1.31 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

-20

±8

DSS

Gate-source voltage

GSS

-330

Drain current

Pulse

-660

Drain power dissipation

Channel temperature

(Note1)

150

°C

150

stg

−55 to 150

°C

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2H1B

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

Weight: 2.4 mg (typ.)

etc).

Note1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.36 mm²×3)

Marking

Equivalent Circuit (top view)

P X

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

Let V be the voltage applied between gate and source that causes the drain current (I ) to below −1 mA for the

SSM3J36FS). Then, for normal switching operation, V

must be higher than V and V

must be lower than

GS(off)

GS(on)

th,

This relationship can be expressed as: V < V < V

GS(off) th GS(on).

th.

Take this into consideration when using the device.

2008-06-11

12 3 4 5

中文翻译

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与SSM3J36FS相关器件

型号	品牌	获取价格	描述	数据表
SSM3J36FS,LF(T	TOSHIBA	获取价格	暂无描述
SSM3J36MFV	TOSHIBA	获取价格	TRANSISTOR 330 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, VESM, 2-1L1B, 3 PIN, FET Gen
SSM3J36TU	TOSHIBA	获取价格	Power Management Switches
SSM3J371R	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -4.0 A, 0.055 Ω@4.5V, SOT
SSM3J372R	TOSHIBA	获取价格	P-ch MOSFET, -30 V, -6.0 A, 0.042 Ω@10V, SOT-
SSM3J374R	TOSHIBA	获取价格	P-ch MOSFET, -30 V, -4.0 A, 0.071 Ω@10V, SOT-
SSM3J375F	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -2.0 A, 0.15 Ω@4.5V, SOT-
SSM3J377R	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -3.9 A, 0.093 Ω@4.5V, SOT
SSM3J378R	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -6.0 A, 0.0298 Ω@4.5V, SO
SSM3J46CTB	TOSHIBA	获取价格	Power Management Switch Applications

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