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SiSS32LDN PDF预览

SiSS32LDN

更新时间: 2024-11-25 14:54:39
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威世 - VISHAY /
页数 文件大小 规格书
9页 250K
描述
N-Channel 80 V (D-S) MOSFET

SiSS32LDN 数据手册

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SiSS32LDN  
Vishay Siliconix  
www.vishay.com  
N-Channel 80 V (D-S) MOSFET  
FEATURES  
PowerPAK® 1212-8S  
D
8
• TrenchFET® Gen IV power MOSFET  
• Very low RDS - Qg figure-of-merit (FOM)  
• Tuned for the lowest RDS - Qoss FOM  
• 100 % Rg and UIS tested  
D
7
D
6
D
5
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
1
S
2
S
3
S
4
G
1
APPLICATIONS  
D
Top View  
Bottom View  
• Synchronous rectification  
• Primary side switch  
• DC/DC converter  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) max. () at VGS = 10 V  
80  
G
0.0072  
0.0095  
17.7  
• Motor drive switch  
R
DS(on) max. () at VGS = 4.5 V  
• Battery and load switch  
Qg typ. (nC)  
ID (A)  
• Industrial  
S
63  
N-Channel MOSFET  
Configuration  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
Alternate manufacturing location  
PowerPAK 1212-8S  
SiSS32LDN-T1-GE3  
SiSS32LDN-T1-BE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
80  
20  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
63  
50.3  
17.4 b, c  
13.9 b, c  
150  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
59.7  
4.5 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
20  
20  
65.7  
42  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
5 b, c  
3.2 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
SYMBOL  
RthJA  
TYPICAL  
20  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
25  
°C/W  
Maximum junction-to-case (drain)  
RthJC  
1.5  
1.9  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 63 °C/W  
g. TC = 25 °C  
S23-0899-Rev. B, 30-Oct-2023  
Document Number: 77179  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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