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SiSS52DN PDF预览

SiSS52DN

更新时间: 2023-12-06 20:07:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 301K
描述
N-Channel 30 V (D-S) MOSFET

SiSS52DN 数据手册

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SiSS52DN  
Vishay Siliconix  
www.vishay.com  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Gen V power MOSFET  
PowerPAK® 1212-8S  
D
8
D
7
D
6
D
5
• Very low RDS x Qg figure-of-merit (FOM)  
• Enables higher power density with very low  
RDS(on) and thermally enhanced compact  
package  
• 100 % Rg and UIS tested  
1
S
2
S
3
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
4
G
1
Top View  
Bottom View  
D
APPLICATIONS  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) max. () at VGS = 10 V  
RDS(on) max. () at VGS = 4.5 V  
Qg typ. (nC)  
• DC/DC converterä  
• POL  
30  
0.0012  
0.0019  
19.9  
• Synchronous rectification  
G
• Battery management  
• Power and load switch  
ID (A)  
162  
Configuration  
Single  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK 1212-8S  
SiSS52DN-T1-GE3  
SiSS52DN-T1-UE3  
Lead (Pb)-free, halogen-free, BLR and IOL  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
30  
+16 / -12  
162  
UNIT  
VDS  
VGS  
V
TC = 25 °C  
C = 70 °C  
TA = 25 °C  
TA = 70 °C  
T
129  
Continuous drain current (TJ = 150 °C)  
ID  
47.1 b, c  
37.7 b, c  
250  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
51.8  
4.3 b, c  
30  
45  
57  
36  
4.8 b, c  
3 b, c  
Continuous source-drain diode current  
TA = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
21  
MAXIMUM  
UNIT  
Maximum junction-to-ambient b  
t 10 s  
Steady state  
26  
2.2  
°C/W  
Maximum junction-to-case (drain)  
1.7  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 70 °C/W  
g. TC = 25 °C  
S23-0122-Rev. C, 06-Mar-2023  
Document Number: 79977  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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