Datasheet > SiSS40DN

SiSS40DN

更新时间： 2024-11-06 14:55:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	183K
描述
N-Channel 100 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiSS40DN 数据手册

SiSS40DN

Vishay Siliconix

N-Channel 100 V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

ThunderFET^®Technology Optimizes Balance

V_DS(V)

R_DS(on)() (Max.)

0.0210 at V_GS= 10 V

0.0230 at V_GS= 7.5 V

0.0260 at V_GS= 6 V

I_D(A)^f

36.5

Q_g(Typ.)

of R_DS(on), Q_g, Q_swand Q_oss

100 % R_gand UIS Tested

Material categorization:

•

100

10 nC

For definitions of compliance please see

www.vishay.com/doc?99912

PowerPAK 1212-8S

3.3 mm

APPLICATIONS

•

Primary side switch

Synchronous Rectification

DC/DC Conversion

Load Switching

Boost Converters

DC/AC Inverters

0.75 mm

3.3 mm

BottomView

N-Channel MOSFET

Ordering Information:

SiSS40DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

36.5

Continuous Drain Current (T_J= 150 °C)

I_D

9.7^{a, b}

7.8^{a, b}

Pulsed Drain Current (t = 300 µs)

I_DM

I_S

40^g

3.1^{a, b}

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

E_AS

_C= 70 °C

_A= 25 °C

Maximum Power Dissipation

P_D

3.7^{a, b}

2.4^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, e}

Symbol

Typical

Maximum

Unit

t  10 s

Steady State

R_thJA

R_thJC

°C/W

Maximum Junction-to-Case (Drain)

1.9

2.4

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 81 °C/W.

f. Based on T_C= 25 °C.

g. Package limited.

Document Number: 62881

S13-1668-Rev. A, 29-Jul-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiSS40DN相关器件

型号	品牌	获取价格	描述	数据表
SiSS42DN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SiSS42LDN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SiSS4402DN	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiSS4409DN	VISHAY	获取价格	P-Channel 40 V (D-S) MOSFET
SiSS4410DN	VISHAY	获取价格	N-Channel 40V (D-S) MOSFET
SiSS46DN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SiSS50DN	VISHAY	获取价格	N-Channel 45 V (D-S) MOSFET
SiSS5108DN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SiSS5110DN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SiSS5112DN	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET

与SiSS40DN相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

SiSS40DN

SiSS40DN 数据手册

与SiSS40DN相关器件

与SiSS40DN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiSS40DN

SiSS40DN 数据手册

与SiSS40DN相关器件

与SiSS40DN相关文章

您还可以找

您在本页遇到什么问题？