Datasheet > SiSS5808DN

SiSS5808DN

更新时间： 2024-11-25 14:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	242K
描述
N-Channel 80 V (D-S) MOSFET

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SiSS5808DN 数据手册

SiSS5808DN

Vishay Siliconix

www.vishay.com

N-Channel 80 V (D-S) MOSFET

FEATURES

PowerPAK^®1212-8S

• TrenchFET^®Gen V power MOSFET

• Very low R_DSx Q_gfigure-of-merit (FOM)

• Tuned for the lowest R_DSx Q_ossFOM

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Synchronous rectification

• Primary side switch

• DC/DC converters

PRODUCT SUMMARY

V_DS(V)

0.00745

0.011

11.8

R_DS(on)max. () at V_GS= 10 V

R_DS(on)max. () at V_GS= 7.5 V

Q_gtyp. (nC)

• OR-ing and hot swap switch

• Power supplies

N-Channel MOSFET

• Motor drive control

I_D(A) ^a

66.4

• Battery management

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK 1212-8S

SiSS5808DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

66.6

53.1

18.3 ^{b, c}

14.6 ^{b, c}

150

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

59.8

4.5 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

31.25

65.7

42.1

5 ^{b, c}

3.2 ^{b, c}

-55 to +150

260

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

1.9

°C/W

Maximum junction-to-case (drain)

1.5

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 63 °C/W

S22-1026-Rev. A, 12-Dec-2022

Document Number: 62159

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SiSS5808DN相关器件

型号	品牌	获取价格	描述	数据表
SiSS5810DN	VISHAY	获取价格	N-Channel 80 V (D-S) MOSFET
SiSS588DN	VISHAY	获取价格	N-Channel 80 V (D-S) MOSFET
SiSS60DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiSS61DN	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiSS63DN	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
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SiSS65DN	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiSS66DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SISS66DN-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
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