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SiSS5810DN PDF预览

SiSS5810DN

更新时间: 2024-04-09 19:02:26
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 235K
描述
N-Channel 80 V (D-S) MOSFET

SiSS5810DN 数据手册

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SiSS5810DN  
Vishay Siliconix  
www.vishay.com  
N-Channel 80 V (D-S) MOSFET  
FEATURES  
PowerPAK® 1212-8S  
D
8
• TrenchFET® Gen V power MOSFET  
• Very low RDS x Qg figure-of-merit (FOM)  
• Tuned for the lowest RDS x Qoss FOM  
• 100 % Rg and UIS tested  
D
7
D
6
D
5
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
1
S
2
S
3
S
4
G
1
D
APPLICATIONS  
Top View  
Bottom View  
• Synchronous rectification  
• Primary side switch  
• DC/DC converters  
PRODUCT SUMMARY  
VDS (V)  
80  
0.010  
0.0157  
9.2  
G
RDS(on) max. (Ω) at VGS = 10 V  
RDS(on) max. (Ω) at VGS = 7.5 V  
Qg typ. (nC)  
• OR-ing and hot swap switch  
• Power supplies  
N-Channel MOSFET  
• Motor drive control  
ID (A) a  
51  
S
• Battery management  
Configuration  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK 1212-8S  
SiSS5810DN-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
80  
20  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
51  
40.8  
13.9 b, c  
11.1 b, c  
100  
47.3  
3.5 b, c  
20  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
Continuous source-drain diode current  
TA = 25 °C  
L = 0.1 mH  
TC = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
20  
52  
mJ  
W
TC = 70 °C  
33.3  
3.9 b, c  
2.5 b, c  
-55 to +150  
260  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
SYMBOL  
RthJA  
TYPICAL  
23  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
32  
°C/W  
Maximum junction-to-case (drain)  
RthJC  
1.9  
2.4  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 81 °C/W  
S23-1175-Rev. A, 25-Dec-2023  
Document Number: 62487  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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