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SISS66DN-T1-GE3

更新时间： 2024-01-21 23:03:42
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 193K
描述
Power Field-Effect Transistor,

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SISS66DN-T1-GE3 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknownFactory Lead Time：9 weeks 6 days
风险等级：2.14Base Number Matches：1

SISS66DN-T1-GE3 数据手册

 浏览型号SISS66DN-T1-GE3的Datasheet PDF文件第2页浏览型号SISS66DN-T1-GE3的Datasheet PDF文件第3页浏览型号SISS66DN-T1-GE3的Datasheet PDF文件第4页浏览型号SISS66DN-T1-GE3的Datasheet PDF文件第5页浏览型号SISS66DN-T1-GE3的Datasheet PDF文件第6页浏览型号SISS66DN-T1-GE3的Datasheet PDF文件第7页 
SiSS66DN  
Vishay Siliconix  
www.vishay.com  
N-Channel 30 V (D-S) MOSFET with Schottky Diode  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
• SKYFET® with monolithic Schottky diode  
PowerPAK® 1212-8S  
D
8
D
7
D
6
D
5
• Optimized RDS x Qg and RDS x Qgd FOM enable  
higher efficiency for high frequency switching  
• 100 % Rg and UIS tested  
1
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
S
3
S
4
G
1
Top View  
Bottom View  
APPLICATIONS  
D
• Synchronous rectification  
PRODUCT SUMMARY  
VDS (V)  
30  
• Synchronous buck converter  
Schottky  
R
DS(on) max. () at VGS = 10 V  
DS(on) max. () at VGS = 4.5 V  
0.00138  
0.00219  
24.7  
• DC/DC conversions  
G
Diode  
R
Qg typ. (nC)  
D (A)  
Configuration  
I
178.3  
S
N-Channel MOSFET  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK 1212-8S  
SiSS66DN-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
30  
UNIT  
VDS  
VGS  
V
+20 / -16  
178.3  
142.6  
49.1 b, c  
39.3 b, c  
200  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
97.5  
8.5 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
20  
20  
65.8  
42.1  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
5.1 b, c  
3.2 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
SYMBOL  
RthJA  
TYPICAL  
20  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
25  
°C/W  
Maximum junction-to-case (drain)  
Notes  
RthJC  
1.5  
1.9  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 63 °C/W  
S19-0105-Rev. A, 04-Feb-2019  
Document Number: 77026  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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