Datasheet > SISS66DN-T1-GE3

SISS66DN-T1-GE3

更新时间： 2024-02-06 04:59:42

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	193K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SISS66DN-T1-GE3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	9 weeks 6 days
风险等级：	2.14	Base Number Matches：	1

SISS66DN-T1-GE3 数据手册

SiSS66DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

200

10000

1000

100

150

100

125

150

T_C- Case Temperature (°C)

Current Derating ^a

Axis Title

10000

1000

100

2.5

2.0

1.5

1.0

0.5

10000

1000

100

125

150

100

125

150

T_C- Case Temperature (°C)

2nd line

T_A- Ambient Temperature (°C)

2nd line

Power, Junction-to-Case

Power, Junction-to-Ambient

Note

a. The power dissipation P_Dis based on T_Jmax. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit

S19-0105-Rev. A, 04-Feb-2019

Document Number: 77026

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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