Datasheet > SIHF12N60E

SIHF12N60E

更新时间： 2024-11-06 12:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	174K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHF12N60E 数据手册

SiHF12N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) R_onx Q_g

• Low Input Capacitance (C_iss

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q_g)

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

650

)

V_GS= 10 V

0.38

_gs(nC)

_gd(nC)

Configuration

Single

APPLICATIONS

TO-220 FULLPAK

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

• Industrial

N-Channel MOSFET

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF12N60E-GE3

SiHF12N60E-E3

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

600

Gate-Source Voltage

V_GS

Gate-Source Voltage AC (f > 1 Hz)

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)^e

V_GSat 10 V

I_D

T_C= 100 °C

7.8

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.26

W/°C

E_AS

P_D

117

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

Soldering Recommendations (Peak Temperature)^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 11.6 mH, R_g= 25 , I_AS= 4.5 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

e. Limited by maximum junction temperature.

S13-0059-Rev. D, 21-Jan-13

Document Number: 91481

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与SIHF12N60E相关器件

型号	品牌	获取价格	描述	数据表
SiHF12N65E	VISHAY	获取价格	E Series Power MOSFET
SIHF12N65E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
SIHF15N60E	VISHAY	获取价格	E Series Power MOSFET
SiHF15N65E	VISHAY	获取价格	E Series Power MOSFET
SIHF16N50C-E3	VISHAY	获取价格	Gate Charge Improved Compliant to RoHS Directive 2002/95/EC
SiHF18N50D	VISHAY	获取价格	D Series Power MOSFET
SIHF18N50D-E3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SIHF22N60E	VISHAY	获取价格	E Series Power MOSFET
SIHF22N60E-E3	VISHAY	获取价格	E Series Power MOSFET
SIHF22N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Met