5秒后页面跳转
SiHF080N60E PDF预览

SiHF080N60E

更新时间: 2024-11-07 14:53:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 154K
描述
E Series Power MOSFET

SiHF080N60E 数据手册

 浏览型号SiHF080N60E的Datasheet PDF文件第2页浏览型号SiHF080N60E的Datasheet PDF文件第3页浏览型号SiHF080N60E的Datasheet PDF文件第4页浏览型号SiHF080N60E的Datasheet PDF文件第5页浏览型号SiHF080N60E的Datasheet PDF文件第6页浏览型号SiHF080N60E的Datasheet PDF文件第7页 
SiHF080N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
D
TO-220 FULLPAK  
• 4th generation E series technology  
• Low figure-of-merit (FOM) Ron x Qg  
• Low effective capacitance (Co(er)  
)
G
• Reduced switching and conduction losses  
• Avalanche energy rated (UIS)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
S
D
G
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
650  
RDS(on) typ. (Ω) at 25 °C  
VGS = 10 V  
0.070  
Qg max. (nC)  
63  
19  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
Q
gs (nC)  
gd (nC)  
Q
10  
Configuration  
Single  
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
SIHF080N60E-GE3  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
600  
V
VGS  
30  
T
C = 25 °C  
14  
Continuous drain current (TJ = 150 °C) e  
VGS at 10 V  
ID  
TC = 100 °C  
9
96  
A
Pulsed drain current a  
IDM  
Linear derating factor  
0.28  
226  
W/°C  
mJ  
W
Single pulse avalanche energy b  
Maximum power dissipation  
Operating junction and storage temperature range  
Drain-source voltage slope  
Reverse diode dv/dt d  
Soldering recommendations (peak temperature) c  
EAS  
PD  
35  
TJ, Tstg  
-55 to +150  
100  
°C  
TJ = 125 °C  
For 10 s  
dv/dt  
V/ns  
10  
260  
°C  
Mounting torque, M3 screw  
0.6  
Nm  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A  
c. 1.6 mm from case  
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C  
e. Limited by maximum junction temperature  
S21-0062-Rev. A, 01-Feb-2021  
Document Number: 92378  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiHF080N60E相关器件

型号 品牌 获取价格 描述 数据表
SiHF085N60EF VISHAY

获取价格

EF Series Power MOSFET With Fast Body Diode
SiHF10N40D VISHAY

获取价格

D Series Power MOSFET
SIHF12N50C VISHAY

获取价格

TRANSISTOR 12 A, 500 V, 0.555 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, FULLPAC
SIHF12N50C-E3 VISHAY

获取价格

100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC
SIHF12N60E VISHAY

获取价格

E Series Power MOSFET
SiHF12N65E VISHAY

获取价格

E Series Power MOSFET
SIHF12N65E-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
SIHF15N60E VISHAY

获取价格

E Series Power MOSFET
SiHF15N65E VISHAY

获取价格

E Series Power MOSFET
SIHF16N50C-E3 VISHAY

获取价格

Gate Charge Improved Compliant to RoHS Directive 2002/95/EC